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Revealing the role of interface disorder in modulating critical current density of Josephson junctions
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  • Published: 06 January 2026

Revealing the role of interface disorder in modulating critical current density of Josephson junctions

  • Chuanbing Han1 na1,
  • Huihui Sun1 na1,
  • Yonglong Shen2,
  • Junling Qiu3,
  • Peng Xu1,
  • Fudong Liu1,
  • Bo Zhao1,
  • Xiaohan Yu1,
  • Weilong Wang1,
  • Shuya Wang1,
  • Qing Mu1,
  • Benzheng Yuan1,
  • Lixin Wang1,
  • Chaofeng Hou4 &
  • …
  • Zheng Shan1 

npj Computational Materials , Article number:  (2026) Cite this article

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We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.

Subjects

  • Materials science
  • Physics

Abstract

Suppressing critical current density (Jc) fluctuations in Josephson junctions is essential for improving the reproducibility and scalability of superconducting quantum processors. Despite many elucidations of microscopic mechanisms, the physical modulation of Jc by atomic-scale disorder at the metal-insulator interface remains elusive. Here, we reveal that interfacial bonding topology distortions are the dominant source that regulates Jc uniformity. We identify a new disorder metric, Interface Bonding Topology Factor (IBTF), that captures bond-angle fluctuations and oxygen-coordination heterogeneity within Jc variations. Through multivariate analysis, Jc is exponentially correlated with interface disorder and barrier thickness (d) by Jc ∝ e−IBTF⋅d, explaining 91.88% of the observed Jc inhomogeneity. We establish IBTF as a tunable physical degree of freedom whose suppression efficacy enhances significantly with increasing d, and demonstrate its active modulation by twin boundary engineering in electrodes. This work provides a device-oriented strategy and a tunable physical metric beyond single-feature control for scalable high-performance quantum processors.

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Data availability

The data that support the findings of this study are available within the paper and its Supplementary Information.

Code availability

Codes are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was supported by the Major Science and Technology Project of Henan Province (221100210400), and the Natural Science Foundation of Henan Province (222300420546). Computational resources were provided by the National Supercomputing Center in Zhengzhou. We thank Jianshe Liu, Wenlong Yu, Zhao Wang, and Dong Lan for their valuable insights and comments. We thank the School of Physics at Nanjing University for the nanofabrication. We thank the software services from Hzwtech.

Author information

Author notes
  1. These authors contributed equally: Chuanbing Han, Huihui Sun.

Authors and Affiliations

  1. Laboratory for Advanced Computing and Intelligence Engineering, Zhengzhou, China

    Chuanbing Han, Huihui Sun, Peng Xu, Fudong Liu, Bo Zhao, Xiaohan Yu, Weilong Wang, Shuya Wang, Qing Mu, Benzheng Yuan, Lixin Wang & Zheng Shan

  2. State Center for International Cooperation on Designer Low-Carbon and Environmental Materials (CDLCEM), School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, China

    Yonglong Shen

  3. Zhongyuan University of Technology, Zhengzhou, China

    Junling Qiu

  4. Institute of Process Engineering, Chinese Academy of Sciences, Beijing, China

    Chaofeng Hou

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Contributions

C.Han, H.S., and Z.S. conceived the study and planned the computational work. C.Han and J.Q. performed the first principles calculations, feature extraction, experimental characterization analysis, and machine-learning calculations with assistance from H.S., Y.S., and Z.S. H.S. and Y.S. characterized the sample. P.X., X.Y., W.W., S.W., Q.M., B.Y., L.W., and C.Hou advised on the machine learning method and interpretation of results. F.L., B.Z., and Z.S. supervised the study. All authors analyzed the data and contributed to reviewing and editing the manuscript and the Supplementary Information.

Corresponding author

Correspondence to Zheng Shan.

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Han, C., Sun, H., Shen, Y. et al. Revealing the role of interface disorder in modulating critical current density of Josephson junctions. npj Comput Mater (2026). https://doi.org/10.1038/s41524-025-01941-7

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  • Received: 07 August 2025

  • Accepted: 16 December 2025

  • Published: 06 January 2026

  • DOI: https://doi.org/10.1038/s41524-025-01941-7

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