Fig. 4: Photoswitching characteristics of capacitive photodetectors.

a, b Capacitance variation of the photodetector with ZnS:Cu phosphor: a when illuminated with light of 448 nm wavelength and (b) under illumination with light of 505 nm wavelength. c, d Capacitance variation of the photodetector with ZnS:Cu,Cl phosphor: c when illuminated with light of 448 nm wavelength and (d) under illumination with light of 505 nm wavelength. e Dynamic capacitance trends of the AgNWs/ZnS:Cu-PUA/AgNWs photodetector in response to varying light intensities. f Capacitance values recorded as the light source is moved away from the AgNWs/ZnS:Cu-PUA/AgNWs photodetector. g Digital images depicting the experimental setup used to perform the measurements. h The photoresponse time of the AgNWs/ZnS:Cu-PUA/AgNWs photodetector. i Capacitance change of the AgNWs/ZnS:Cu-PUA/AgNWs photodetector in a bent state, with curvature radii of 10 mm, 5 mm, and 2 mm. j Capacitance change of the AgNWs/ZnS:Cu-PUA/AgNWs photodetector in a stretched state, with stretching strains of 5%, 20%, and 30%. k Real-time recording of the capacitance values as the applied stretching strain on the AgNWs/ZnS:Cu-PUA/AgNWs photodetector increases. l Real-time recording of the resistance values corresponding to the increasing stretching strain applied to the photodetector.