Fig. 2: Hole qubit EDSR Rabi frequency fπ calculated from the k.p model under uniform uniaxial strain. | npj Quantum Information

Fig. 2: Hole qubit EDSR Rabi frequency fπ calculated from the k.p model under uniform uniaxial strain.

From: Effect of disorder and strain on the operation of planar Ge hole spin qubits

Fig. 2

The angles of B and \({\tilde{{\bf{E}}}}_{{\rm{ac}}}\) w.r.t. the [100] axis are denoted by θ and ϕ, respectively. At Fz = 1.5 MV/m (ad) and Fz = 15 MV/m (eh) top-gate fields, with uniaxial strain assumption, fπ is evaluated for a smaller dot first, a, e ad = 20 nm, B = 200 mT, b, f ad = 20 nm, B = 670 mT; and then for a larger dot, c, g ad = 45 nm, B = 200 mT, d, h ad = 45 nm, B = 670 mT. Here, ad signifies the dot radius, and B denotes the magnitude of the applied magnetic field. As suggested by the color bars, the EDSR Rabi frequency improves with increasing the dot radius as well as the applied B strength. fπ(θ, ϕ) largely follows the trend of the dot product \({\bf{B}}\cdot {\tilde{{\bf{E}}}}_{{\rm{ac}}}\). As shown in (d, h), for a large dot at a higher magnetic field, the strong orbital vector potential terms cause the fπ(θ, ϕ) trend to deviate from the dot product \({\bf{B}}\cdot {\tilde{{\bf{E}}}}_{{\rm{ac}}}\) relation. The microwave drive amplitude is given by Eac = 10 kV/m.

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