Extended Data Fig. 10: Assessment of Ga implantation in cBN nanopillars post FIB milling and argon cleaning.
From: Activating deformation twinning in cubic boron nitride
a, EDS mapping. b, EELS mapping. c1, APT three-dimensional reconstruction of a cBN nanopillar. Note the Ga map displays only background noise. c2, Corresponding mass spectrum from the entire APT volume, where the Ga mass-to-charge ratio peak is not detected. All analytic techniques consistently demonstrated minimal Ga content in the cBN nanopillars post-cleaning, with levels below the instrument’s noise threshold.
