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Rapid growth of inch-sized lanthanide oxychloride single crystals

Abstract

The layered lanthanide oxychloride (LnOCl) family, featuring a low equivalent oxide thickness, high breakdown field and magnetic ordering properties, holds great promise for next-generation van der Waals devices. However, the exploitation of LnOCl materials has been hindered by a lack of reliable methods for growing their single-crystalline phases. Here we achieved the growth of inch-sized bulk LnOCl single crystals and single-crystalline thin films with thickness down to the monolayer in a few hours. The monolayer LnOCl exhibits ultralow equivalent oxide thicknesses, for instance, LaOCl and SmOCl have values of 0.25 and 0.34, respectively. Furthermore, using LnOCl as a dielectric in graphene devices, we demonstrate wafer-scale enhancement of carrier mobility and a well-developed quantum Hall effect. The induced strong magnetic proximity effect by SmOCl and DyOCl enables efficient interfacial charge transfer with magnetic exchange coupling This work provides a general strategy for synthesizing large-sized single-crystalline layered materials, enriching the library of ultralow-equivalent-oxide-thickness dielectric materials, and two-dimensional magnetic materials with induced strong magnetic proximity effect.

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Fig. 1: Oriented attachment assisted by KCl flux.
Fig. 2: Preparation and exfoliation of LnOCl bulk single crystals.
Fig. 3: CVD growth of single-crystalline LnOCl (Ln = La and Sm) wafers and their dielectric properties.
Fig. 4: Transport characterization, ZSHE and MPE of SmOCl–graphene heterostructure devices.

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Data availability

Data supporting the results of this study are provided in this Article and its Supplementary Information and are available from the corresponding authors upon request. Source data are provided with this paper.

References

  1. Sierra, J. F., Fabian, J., Kawakami, R. K., Roche, S. & Valenzuela, S. O. Van der Waals heterostructures for spintronics and opto-spintronics. Nat. Nanotechnol. 16, 856–868 (2021).

    Article  CAS  PubMed  Google Scholar 

  2. Kurebayashi, H., Garcia, J. H., Khan, S., Sinova, J. & Roche, S. Magnetism, symmetry and spin transport in van der Waals layered systems. Nat. Rev. Phys. 4, 150–166 (2022).

    Article  CAS  Google Scholar 

  3. Gong, C. & Zhang, X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 363, eaav4450 (2019).

    Article  CAS  PubMed  Google Scholar 

  4. Zhang, C. et al. Single-crystalline van der Waals layered dielectric with high dielectric constant. Nat. Mater. 22, 832–837 (2023).

    Article  CAS  PubMed  Google Scholar 

  5. Zeng, S., Liu, C. & Zhou, P. Transistor engineering based on 2D materials in the post-silicon era. Nat. Rev. Electr. Eng. 1, 335–348 (2024).

    Article  Google Scholar 

  6. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).

    Article  CAS  Google Scholar 

  7. Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  8. Xu, Y. et al. Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors. Nat. Mater. 22, 1078–1084 (2023).

    Article  CAS  PubMed  Google Scholar 

  9. Wang, Y. et al. Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate. Nat. Mater. 23, 1495–1501 (2024).

    Article  CAS  PubMed  Google Scholar 

  10. Knobloch, T. et al. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nat. Electron. 4, 98–108 (2021).

    Article  CAS  Google Scholar 

  11. Huang, J.-K. et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 605, 262–267 (2022).

    Article  CAS  PubMed  Google Scholar 

  12. Zeng, D. et al. Single-crystalline metal-oxide dielectrics for top-gate 2D transistors. Nature 632, 788–794 (2024).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  13. Osanloo, M. R., Van de Put, M. L., Saadat, A. & Vandenberghe, W. G. Identification of two-dimensional layered dielectrics from first principles. Nat. Commun. 12, 5051 (2021).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  14. Del Cul, G., Nave, S., Begun, G. & Peterson, J. Raman spectra of tetragonal lanthanide oxychlorides obtained from polycrystalline and single‐crystal samples. J. Raman Spectrosc. 23, 267–272 (1992).

    Article  Google Scholar 

  15. Tian, C. et al. DyOCl: a rare-earth based two-dimensional van der Waals material with strong magnetic anisotropy. Phys. Rev. B 104, 214410 (2021).

    Article  CAS  Google Scholar 

  16. Del Cul, G., Nave, S. & Peterson, J. Polarized Raman spectra of single-crystal lanthanide oxychlorides. J. Alloys Compd. 193, 194–196 (1993).

    Article  Google Scholar 

  17. Zhang, B. et al. General approach for two-dimensional rare-earth oxyhalides with high gate dielectric performance. J. Am. Chem. Soc. 145, 11074–11084 (2023).

    Article  CAS  PubMed  Google Scholar 

  18. Zhao, Z. et al. A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials. Nat. Commun. 14, 958 (2023).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  19. Li, L. et al. Ultrathin van der Waals lanthanum oxychloride dielectric for 2D field‐effect transistors. Adv. Mater., 2309296 (2023).

  20. Zhang, P. et al. Flux-assisted growth of atomically thin materials. Nat. Synth. 1, 864–872 (2022).

    Article  CAS  Google Scholar 

  21. Villalpando, G. et al. Chemical exfoliation toward magnetic 2D VOCl monolayers. ACS Nano 16, 13814–13820 (2022).

    Article  CAS  PubMed  Google Scholar 

  22. Wang, Y. et al. Quantum Hall phase in graphene engineered by interfacial charge coupling. Nat. Nanotechnol. 17, 1272–1279 (2022).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  23. Zhang, T. et al. Magnetism and optical anisotropy in van der Waals antiferromagnetic insulator CrOCl. ACS Nano 13, 11353–11362 (2019).

    Article  CAS  PubMed  Google Scholar 

  24. Hölsä, J., Lamminmäki, R.-J., Lastusaari, M., Porcher, P. & Sáez-Puche, R. Simulation of the paramagnetic susceptibility in rare earth oxychlorides. J. Alloys Compd. 303, 498–504 (2000).

    Article  Google Scholar 

  25. Wei, P. et al. Strong interfacial exchange field in the graphene/EuS heterostructure. Nat. Mater. 15, 711–716 (2016).

    Article  CAS  PubMed  Google Scholar 

  26. Wu, Y. et al. Large exchange splitting in monolayer graphene magnetized by an antiferromagnet. Nat. Electron. 3, 604–611 (2020).

    Article  CAS  Google Scholar 

  27. Haugen, H., Huertas-Hernando, D. & Brataas, A. Spin transport in proximity-induced ferromagnetic graphene. Phys. Rev. B 77, 115406 (2008).

    Article  Google Scholar 

  28. Rahman, S., Torres, J. F., Khan, A. R. & Lu, Y. Recent developments in van der Waals antiferromagnetic 2D materials: synthesis, characterization, and device implementation. ACS Nano 15, 17175–17213 (2021).

    Article  CAS  PubMed  Google Scholar 

  29. Cheng, R., Xiao, D. & Brataas, A. Terahertz antiferromagnetic spin Hall nano-oscillator. Phys. Rev. Lett. 116, 207603 (2016).

    Article  PubMed  Google Scholar 

  30. Haeuseler, H. Raman spectra of single crystals of LaOCl. J. Raman Spectrosc. 15, 120–121 (1984).

    Article  CAS  Google Scholar 

  31. Emerson, M. S. et al. Complete description of the LaCl3-NaCl melt structure and the concept of a spacer salt that causes structural heterogeneity. J. Am. Chem. Soc. 144, 21751–21762 (2022).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  32. Shang, M., Li, C. & Lin, J. How to produce white light in a single-phase host? Chem. Soc. Rev. 43, 1372–1386 (2014).

    Article  CAS  PubMed  Google Scholar 

  33. Yang, K. et al. Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene. Nat. Commun. 14, 2136 (2023).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  34. Zeng, Y. et al. 2D FeOCl: a highly in‐plane anisotropic antiferromagnetic semiconductor synthesized via temperature‐oscillation chemical vapor transport. Adv. Mater. 34, 2108847 (2022).

    Article  CAS  Google Scholar 

  35. Zheng, X. et al. Highly anisotropic thermal conductivity of few-layer CrOCl for efficient heat dissipation in graphene device. Nano Res. 15, 9377–9385 (2022).

    Article  CAS  Google Scholar 

  36. Wang, W. et al. Atomic structure, work function and magnetism in layered single crystal VOCl. 2D Mater. 8, 015027 (2020).

    Article  Google Scholar 

  37. Ferrenti, A. M. et al. Change in magnetic properties upon chemical exfoliation of FeOCl. Inorg. Chem. 59, 1176–1182 (2019).

    Article  PubMed  Google Scholar 

  38. Li, S. et al. Anti-ambipolar and polarization-resolved behavior in MoTe2 channel sensitized with low-symmetric CrOCl. Appl. Phys. Lett. 122, 083503 (2023).

  39. Zhang, T. et al. Tuning the exchange bias effect in 2D van der Waals ferro‐/antiferromagnetic Fe3GeTe2/CrOCl heterostructures. Adv. Sci. 9, 2105483 (2022).

    Article  CAS  Google Scholar 

  40. Zhang, M. et al. Spin‐lattice coupled metamagnetism in frustrated van der Waals magnet CrOCl. Small 19, 2300964 (2023).

    Article  CAS  Google Scholar 

  41. Söll, A. et al. High-κ wide-gap layered dielectric for two-dimensional van der Waals heterostructures. ACS Nano 18, 10397–10406 (2024).

    Article  PubMed  PubMed Central  Google Scholar 

  42. Afanasiev, P., Aouine, M., Deranlot, C. & Epicier, T. Ordered arrays of nanorods obtained by solid–liquid reactions of LaOCl crystals. Chem. Mater. 22, 5411–5419 (2010).

    Article  CAS  Google Scholar 

  43. Chen, T.-A. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219–223 (2020).

    Article  CAS  PubMed  Google Scholar 

  44. Li, W. et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat. Electron. 2, 563–571 (2019).

    Article  CAS  Google Scholar 

  45. Britnell, L. et al. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12, 1707–1710 (2012).

    Article  CAS  PubMed  Google Scholar 

  46. Liu, K. et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat. Electron. 4, 906–913 (2021).

    Article  CAS  Google Scholar 

  47. Zhang, L. et al. Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses. Nat. Electron. 7, 662–670 (2024).

    Article  CAS  Google Scholar 

  48. Nichau, A. et al. Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si. Microelectron. Eng. 109, 109–112 (2013).

    Article  CAS  Google Scholar 

  49. Zhang, Y. et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat. Electron. 5, 643–649 (2022).

    Article  CAS  Google Scholar 

  50. Illarionov, Y. Y. et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat. Electron. 2, 230–235 (2019).

    Article  CAS  Google Scholar 

  51. Zhu, C.-Y. et al. Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics. Nat. Electron. 7, 1137–1146 (2024).

    Article  CAS  Google Scholar 

  52. Gusev, E. et al. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues. Microelectron. Eng. 59, 341–349 (2001).

    Article  CAS  Google Scholar 

  53. Kosub, T., Kopte, M., Radu, F., Schmidt, O. G. & Makarov, D. All-electric access to the magnetic-field-invariant magnetization of antiferromagnets. Phys. Rev. Lett. 115, 097201 (2015).

    Article  PubMed  Google Scholar 

  54. Cheng, Y. et al. Anisotropic magnetoresistance and nontrivial spin Hall magnetoresistance in Pt/α-Fe2O3 bilayers. Phys. Rev. B 100, 220408 (2019).

    Article  CAS  Google Scholar 

  55. Wu, Y. et al. Magnetic exchange field modulation of quantum Hall ferromagnetism in 2D van der Waals CrCl3/graphene heterostructures. ACS Appl. Mater. Interfaces 13, 10656–10663 (2021).

    Article  CAS  PubMed  Google Scholar 

  56. Zhang, Y. et al. Controllable magnetic proximity effect and charge transfer in 2D semiconductor and double‐layered perovskite manganese oxide van der Waals heterostructure. Adv. Mater. 32, 2003501 (2020).

    Article  CAS  Google Scholar 

  57. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).

    Article  CAS  PubMed  Google Scholar 

  58. Tan, Z. et al. Shubnikov-de Haas oscillations of a single layer graphene under d.c. current bias. Phys. Rev. B 84, 115429 (2011).

    Article  Google Scholar 

  59. Tang, C., Zhang, Z., Lai, S., Tan, Q. & Gao, W. B. Magnetic proximity effect in graphene/CrBr3 van der Waals heterostructures. Adv. Mater. 32, 1908498 (2020).

    Article  CAS  Google Scholar 

  60. Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).

    Article  CAS  PubMed  Google Scholar 

  61. Abanin, D. et al. Giant nonlocality near the Dirac point in graphene. Science 332, 328–330 (2011).

    Article  CAS  PubMed  Google Scholar 

  62. Abanin, D., Gorbachev, R., Novoselov, K., Geim, A. & Levitov, L. Giant spin-hall effect induced by the Zeeman interaction in graphene. Phys. Rev. Lett. 107, 096601 (2011).

    Article  CAS  PubMed  Google Scholar 

  63. Pan, F. et al. Magnetic properties of van der Waals layered single crystals DyOBr and SmOCl. Phys. Rev. Mater. 8, 074006 (2024).

    Article  CAS  Google Scholar 

  64. Haeuseler, H. & Jung, M. Single crystal growth and structure of LaOBr and SmOBr. Mater. Res. Bull. 21, 1291–1294 (1986).

    Article  CAS  Google Scholar 

  65. Zhao, Y. et al. Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact. Nat. Commun. 13, 4409 (2022).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  66. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).

    Article  Google Scholar 

  67. Wang, V., Xu, N., Liu, J.-C., Tang, G. & Geng, W.-T. VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using VASP code. Comput. Phys. Commun. 267, 108033 (2021).

    Article  CAS  Google Scholar 

  68. Topel, M. & Ferguson, A. L. Reconstruction of protein structures from single-molecule time series. J. Chem. Phys. 153, 194102 (2020).

    Article  CAS  PubMed  Google Scholar 

  69. Pizzocchero, F. et al. The hot pick-up technique for batch assembly of van der Waals heterostructures. Nat. Commun. 7, 11894 (2016).

    Article  CAS  PubMed  PubMed Central  Google Scholar 

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Acknowledgements

We thank Z. Liu and K. Jia for synthesizing graphene single-crystalline wafers, and H. Peng for discussions. This work was financially supported by the National Key Research and Development Program of China (no. 2022YFA1204900). This work is also supported by the National Key Research and Development Program of China (no. 2024YFE0202200), the National Science Foundation of China (nos. 52372038, 12374035 and T2188101) and the Innovation Program for Quantum Science and Technology (grant no. 2021ZD0302600). We acknowledge the Molecular Materials and Nanofabrication Laboratory (MMNL) in the College of Chemistry and Peking Nanofab at Peking University for the use of instruments. K.S.N. acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM), project no. EDUNC-33-18-279-V12), and from the Royal Society (UK, grant no. RSRP/R/190000). We thank the Materials Processing and Analysis Center, Peking University, for optical characterization.

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Contributions

L.L. and N.K. conceived the experiment. L.L., N.K. and B.M. supervised the project. Z.S., L.M., H.W. and Z.H. conducted the crystal growth of MOCl. Z.S., L.M. and X.C. conducted the mechanical exfoliation of MOCl. Z.S., L.M., Z.H., X.Z. and Y.Z. obtained and analysed the OM, XPS, TEM, EDS, Raman and AFM data. W.G. and Z.S. conducted the MOCl/graphene device fabrication and electrical measurements. Z.S. conducted the MIM structure and took the measurements. S.B. carried out the theoretical calculations. The manuscript was written by L.L., N.K. and B.M. All authors discussed the results and wrote the manuscript.

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Correspondence to Boyang Mao, Ning Kang or Li Lin.

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Nature Materials thanks Changgu Lee and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Supplementary Figs. 1–33, captions for Supplementary Videos 1–3 and Tables 1–4.

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In situ OM observation of growth process_1.

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In situ OM observation of growth process_2.

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In situ OM observation of growth process_3.

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Shi, Z., Guo, W., Bu, S. et al. Rapid growth of inch-sized lanthanide oxychloride single crystals. Nat. Mater. 24, 852–860 (2025). https://doi.org/10.1038/s41563-025-02142-9

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