Extended Data Fig. 1: Superconductivity in a second device D2.
From: Impact of spin–orbit coupling on superconductivity in rhombohedral graphene
a, Four-terminal resistance Rxx as a function of n and D for device D2. Similar to D1, well-developed SC4 and SC3 can be observed in both D > 0 and D < 0 regime. Inset: optical image of the device. “S” and “D” stand for source and drain, and Rxx is measured from contact “1” / “2”. b, Illustration of sample structure. Different from D1, in D2 RTG is encapsulated by two bilayer tungsten diselenide (2L-WSe2). Thus, the top and bottom 2L-WSe2 are aligned in 0° with respect to each other to preserve the inversion symmetry. c, Differential resistance dV/dI as a function of the direct current IDC of SC4 and SC3, measured at the square and the circle markers in a.
