Abstract
Solid-state thermoelectric technology presents a compelling solution for converting waste heat into electrical energy. However, its widespread application is hindered by long-term stability issues, particularly at the electrode–thermoelectric material interface. Here we address this challenge by constructing an atomic-scale direct bonding interface. By forming robust chemical bonds between Co and Sb atoms, we develop MgAgSb/Co thermoelectric junctions with a low interfacial resistivity (2.5 µΩ cm2), high bonding strength (60.6 MPa) and high thermal stability at 573 K. This thermally stable and ohmic contact interface enables MgAgSb-based thermoelectric modules to achieve a conversion efficiency of 10.2% at a temperature difference of 287 K and to exhibit negligible degradation over 1,440 h of thermal cycling. Our findings underscore the critical role of atomic-scale interface engineering in advancing thermoelectric semiconductor devices, enabling more efficient and durable thermoelectric modules.
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Data availability
All data are available in the Article or its Supplementary Information, and are available from the corresponding authors upon request. The DFT calculation and molecular dynamics configurations have been uploaded to NOMAD at https://nomad-lab.eu/prod/v1/gui/search/entries/entry/id/nNlpJjeDIkwbN1lSZXRaDwp2ahuF/files/_mainfile. Source data are provided with this paper.
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Acknowledgements
This work was financially supported by the National Natural Science Foundation of China (grant nos U23A20685, 52174343 and 51902333), the Innovation Program of Shanghai Municipal Education Commission (no. 202101070003E00110), Shanghai Committee of Science and Technology (no. 23520710300) and ERC grant 3DmultiFerro (project no. 101141331). Q.Z. extends thanks to U. Lemmer for his valuable scientific support. H.C. acknowledges funding from the National Natural Science Foundation of China (no. 52002406).
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Contributions
W.Z., Q.Z. and L.W. initiated the concept and designed this work. W.Z., Y.F., Y.C., X.A. and M.J. synthesized the samples, carried out the thermoelectric property measurements, performed the interfacial microstructural characterization and fabricated and characterized the thermoelectric modules. W.Z., Y.F. and X.A. performed the finite element simulation. H.C. performed the theoretical calculations. Z.Y., Z.F. and F.X. performed the TEM study. S.W. contributed to the preparation of miniature blocks. R.L. and G.C. performed the X-ray microscopy study. W.Z., Q.Z. and L.W. analysed the results. W.Z. and Q.Z. wrote the initial draft. R.X. and D.M. contributed to improving the writing. W.J. supervised the entire project. All authors contributed to the editing.
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W.Z., L.W. and W.J. have filed a patent application (China Patent application no. 2025101595544) related to this study, which is currently pending. The other authors declare no competing interests.
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Supplementary Figs. 1–31, Tables 1–3, Note 1 and Refs. 1 and 2.
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Source Data Fig. 1 (download XLSX )
Module efficiency data plotted in Fig. 1c and thermal cycling test data plotted in Fig. 1d.
Source Data Fig. 2 (download XLSX )
Contact resistivity data plotted in Fig. 2a–d, current–voltage curves data plotted in Fig. 2e and charge density difference data plotted in Fig. 2f,g.
Source Data Fig. 3 (download XLSX )
Elemental line scan data plotted in Fig. 3b,d and atomic migration energy data plotted in Fig. 3e.
Source Data Fig. 4 (download XLSX )
Interfacial shear strength data plotted in Fig. 4a and bonding energy data plotted in Fig. 4c.
Source Data Fig. 5 (download XLSX )
Figure of merit data plotted in Fig. 5a, module efficiency data plotted in Fig. 5b, thermal cycling test data plotted in Fig. 5c and elemental line scan data plotted in Fig. 5e.
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Zuo, W., Chen, H., Yu, Z. et al. Atomic-scale interface strengthening unlocks efficient and durable Mg-based thermoelectric devices. Nat. Mater. 24, 735–742 (2025). https://doi.org/10.1038/s41563-025-02167-0
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DOI: https://doi.org/10.1038/s41563-025-02167-0
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