Extended Data Fig. 2: Raman map images of large area MoS2 films.
From: Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
a, Image mapping the ratio of A peak intensity (IA) of monolayer MoS2 to Si peak intensity (ISi). b, Image mapping the distance between the E peak position (PE) and A peak position (PA) of monolayer MoS2. c, Image mapping the ratio of IA of bilayer MoS2 to ISi. d, Image mapping the distance between the PE and PA of bilayer MoS2. Only the 100 mm×100 mm region is mapped, as the device fabrication area was confined to the 100 mm centre region of the wafer.
