Extended Data Fig. 5: Transfer length method (TLM) of MoS2 FETs.
From: Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
a, Total resistance (Rtot) as a function of channel length (Lch) for single gate and monolayer MoS2 FET at a planar carrier density (n2D) of 7.69 ×1012 cm−2. The number of devices for each Lch is as follows: 10 devices for 30 nm, 52 for 40 nm, 67 for 50 nm, 16 each for 60, 70, 80, 150, 200, 250, and 300 nm, and 15 for 100 nm. b, Same plot for dual gate and monolayer MoS2 FET at n2D of 1.51 ×1013 cm−2. 13 devices for 30 nm, 69 for 40 nm, 85 for 50 nm, and 18 each for 60, 70, 80, 100, 150, 200, 250, and 300 nm. c, Same plot for single gate and bilayer MoS2 FET at n2D of 1.04 ×1013 cm−2. 5 devices for 30 nm, 32 for 40 nm, 55 for 50 nm, 14 for 60 nm, 15 for 70 nm, 14 for 80 nm, 14 for 100 nm, 16 for 150 nm, 16 for 200 nm, 16 for 250 nm, and 17 for 300 nm. d, Same plot for dual gate and bilayer MoS2 FET at n2D of 1.7 ×1013 cm−2. 13 devices for 30 nm, 57 for 40 nm, 78 for 50 nm, 16 for 60 nm, 15 for 70 nm, 16 for 80 nm, 17 for 100 nm, 17 for 150 nm, 17 for 200 nm, 18 for 250 nm, and 17 for 300 nm. All data in this figure are presented as mean values +/- standard deviation.
