Abstract
Floquet engineering provides a powerful pathway for creating non-equilibrium phases of matter with tailored electronic structures and properties through time-periodic driving. As the original theoretical prototype, graphene established the framework in which the Floquet topological insulator with the light-induced anomalous Hall effect was proposed. However, the defining spectroscopic signature of Floquet engineering in graphene, light-induced hybridization (avoided-crossing) gap at Floquet band crossings, has remained experimentally elusive. Here we report the direct observation of a Floquet-induced hybridization gap in monolayer graphene under resonant driving by a strong light field. Time- and angle-resolved photoemission spectroscopy reveals a gap opening at Floquet band crossings, accompanied by coherent Floquet sidebands. The gap exhibits pronounced momentum anisotropy, featuring two Dirac nodes protected by spatiotemporal symmetry and tunable by light polarization. These results provide the long-sought experimental demonstration of Floquet band engineering in graphene, opening up opportunities for light-field-engineered quantum phases in graphene and related materials.
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Data availability
All data supporting the results of this study are available within the Article. Additional data are available from the corresponding author upon request. Source data are provided with this paper.
References
Ashcroft, N. W. & Mermin, N. D. Solid State Physics (Saunders College, 1976).
Shirley, J. H. Solution of the Schrödinger equation with a Hamiltonian periodic in time. Phys. Rev. 138, B979–B987 (1965).
Syzranov, S., Fistul, M. & Efetov, K. Effect of radiation on transport in graphene. Phys. Rev. B 78, 045407 (2008).
López-Rodríguez, F. & Naumis, G. Analytic solution for electrons and holes in graphene under electromagnetic waves: gap appearance and nonlinear effects. Phys. Rev. B 78, 201406 (2008).
Oka, T. & Aoki, H. Photovoltaic Hall effect in graphene. Phys. Rev. B 79, 081406 (2009).
Haldane, F. D. M. Model for a quantum Hall effect without Landau levels: condensed-matter realization of the ‘parity anomaly’. Phys. Rev. Lett. 61, 2015–2018 (1988).
Basov, D. N., Averitt, R. D. & Hsieh, D. Towards properties on demand in quantum materials. Nat. Mater. 16, 1077–1088 (2017).
Oka, T. & Kitamura, S. Floquet engineering of quantum materials. Annu. Rev. Condens. Matter Phys. 10, 387–408 (2019).
de la Torre, A. et al. Colloquium: nonthermal pathways to ultrafast control in quantum materials. Rev. Mod. Phys. 93, 041002 (2021).
Lindner, N. H., Refael, G. & Galitski, V. Floquet topological insulator in semiconductor quantum wells. Nat. Phys. 7, 490–495 (2011).
Bao, C., Tang, P., Sun, D. & Zhou, S. Light-induced emergent phenomena in 2D materials and topological materials. Nat. Rev. Phys. 4, 33–48 (2021).
Ozawa, T. et al. Topological photonics. Rev. Mod. Phys. 91, 015006 (2019).
Eckardt, A. Colloquium: atomic quantum gases in periodically driven optical lattices. Rev. Mod. Phys. 89, 011004 (2017).
Rechtsman, M. C. et al. Photonic Floquet topological insulators. Nature 496, 196–200 (2013).
Jotzu, G. et al. Experimental realization of the topological Haldane model with ultracold fermions. Nature 515, 237–240 (2014).
Gierz, I. et al. Snapshots of non-equilibrium Dirac carrier distributions in graphene. Nat. Mater. 12, 1119–1124 (2013).
Gierz, I. et al. Tracking primary thermalization events in graphene with photoemission at extreme time scales. Phys. Rev. Lett. 115, 086803 (2015).
Na, M. et al. Direct determination of mode-projected electron-phonon coupling in the time domain. Science 366, 1231–1236 (2019).
Aeschlimann, S. et al. Survival of Floquet–Bloch states in the presence of scattering. Nano Lett. 21, 5028–5035 (2021).
Zhang, H. et al. Self-energy dynamics and the mode-specific phonon threshold effect in Kekulé-ordered graphene. Nat. Sci. Rev. 9, nwab175 (2021).
Seetharam, K. I., Bardyn, C.-E., Lindner, N. H., Rudner, M. S. & Refael, G. Steady states of interacting Floquet insulators. Phys. Rev. B 99, 014307 (2019).
Dehghani, H., Oka, T. & Mitra, A. Dissipative Floquet topological systems. Phys. Rev. B 90, 195429 (2014).
Sato, S. et al. Microscopic theory for the light-induced anomalous Hall effect in graphene. Phys. Rev. B 99, 214302 (2019).
McIver, J. W. et al. Light-induced anomalous Hall effect in graphene. Nat. Phys. 16, 38–41 (2020).
Park, S. et al. Steady Floquet–Andreev states in graphene Josephson junctions. Nature 603, 421–426 (2022).
Choi, D. et al. Observation of Floquet–Bloch states in monolayer graphene. Nat. Phys. 21, 1100–1105 (2025).
Merboldt, M. et al. Observation of Floquet states in graphene. Nat. Phys. 21, 1093–1099 (2025).
Madéo, J. & Dani, K. M. Floquet states in graphene revealed at last. Nat. Phys. 21, 1040–1041 (2025).
Wang, Y., Steinberg, H., Jarillo-Herrero, P. & Gedik, N. Observation of Floquet-Bloch states on the surface of a topological insulator. Science 342, 453–457 (2013).
Zhou, S. et al. Pseudospin-selective Floquet band engineering in black phosphorus. Nature 614, 75–80 (2023).
López-Rodríguez, F. & Naumis, G. Graphene under perpendicular incidence of electromagnetic waves: gaps and band structure. Philos. Mag. 90, 2977–2988 (2010).
Kitagawa, T., Oka, T., Brataas, A., Fu, L. & Demler, E. Transport properties of nonequilibrium systems under the application of light: photoinduced quantum Hall insulators without Landau levels. Phys. Rev. B 84, 235108 (2011).
Gu, Z., Fertig, H. A., Arovas, D. P. & Auerbach, A. Floquet spectrum and transport through an irradiated graphene ribbon. Phys. Rev. Lett. 107, 216601 (2011).
Savel’ev, S. E. & Alexandrov, A. S. Massless Dirac fermions in a laser field as a counterpart of graphene superlattices. Phys. Rev. B 84, 035428 (2011).
Calvo, H. L. et al. Tuning laser-induced band gaps in graphene. Appl. Phys. Lett. 98, 232103 (2011).
Zhou, Y. & Wu, M.-W. Optical response of graphene under intense terahertz fields. Phys. Rev. B 83, 245436 (2011).
Delplace, P., Gómez-León, A. & Platero, G. Merging of Dirac points and Floquet topological transitions in a.c.-driven graphene. Phys. Rev. B 88, 245422 (2013).
Usaj, G., Perez-Piskunow, P. M., Foa Torres, L. E. F. & Balseiro, C. A. Irradiated graphene as a tunable Floquet topological insulator. Phys. Rev. B 90, 115423 (2014).
Rodriguez-Lopez, P., Betouras, J. J. & Savel’ev, S. E. Dirac fermion time-Floquet crystal: manipulating Dirac points. Phys. Rev. B 89, 155132 (2014).
Sentef, M. et al. Theory of Floquet band formation and local pseudospin textures in pump-probe photoemission of graphene. Nat. Commun. 6, 7047 (2015).
Liu, H., Sun, J.-T. & Meng, S. Engineering Dirac states in graphene: coexisting type-I and type-II Floquet-Dirac fermions. Phys. Rev. B 99, 075121 (2019).
Broers, L. & Mathey, L. Detecting light-induced Floquet band gaps of graphene via trARPES. Phys. Rev. Res. 4, 013057 (2022).
Zhou, S. Y. et al. Substrate-induced bandgap opening in epitaxial graphene. Nat. Mater. 6, 770–775 (2007).
Kim, S., Ihm, J., Choi, H. J. & Son, Y.-W. Origin of anomalous electronic structure of epitaxial graphene on silicon carbide. Phys. Rev. Lett. 100, 176802 (2008).
Zhong, H. et al. High harmonic generation light source with polarization selectivity and sub-100-μm beam size for time-and angle-resolved photoemission spectroscopy. Ultrafast Sci. 4, 0063 (2024).
Mahmood, F. et al. Selective scattering between Floquet-Bloch and Volkov states in a topological insulator. Nat. Phys. 12, 306–310 (2016).
Fregoso, B. M., Wang, Y., Gedik, N. & Galitski, V. Driven electronic states at the surface of a topological insulator. Phys. Rev. B 88, 155129 (2013).
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009).
Topp, G. E. et al. Topological Floquet engineering of twisted bilayer graphene. Phys. Rev. Res. 1, 023031 (2019).
Rodriguez-Vega, M., Vogl, M. & Fiete, G. A. Low-frequency and moiré–Floquet engineering: a review. Ann. Phys. 435, 168434 (2021).
Wang, Q. et al. Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC (0001) substrates. J. Phys.: Condens. Matter 25, 095002 (2013).
Tikuišis, K. K. et al. Dielectric function of epitaxial quasi-freestanding monolayer graphene on Si-face 6H-SiC in a broad spectral range. Phys. Rev. Mater. 7, 044201 (2023).
Acknowledgements
This work is supported by the National Natural Science Foundation of China (grant numbers 12421004 and 12234011), Tsinghua University Initiative Scientific Research Program (grant number 20251080106), National Key R&D Program of China (grant number 2021YFA1400100), the National Natural Science Foundation of China (grant numbers 12327805, 52388201) and New Cornerstone Science Foundation through the XPLORER PRIZE.
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S.Z. conceived the research project. F.W. and X.C. performed the TrARPES measurements and analysed the data. R.F., X.T. and W.C. prepared the samples. X.C. and H. Zhong developed and optimized the HHG light source. F.W., X.C., J.L., T.S., H. Zhong, H. Zhang and P.Y. discussed the results. F.W., X.C. and S.Z. wrote the manuscript and all authors commented on the manuscript.
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Extended data
Extended Data Fig. 1 Calibration of the Fermi energy EF and negligible pump-induced band broadening at high binding energy.
a, Dispersion image measured before pumping. b, Extracted EDCs within the region marked by the red box and fitting using Fermi-Dirac distribution (red curve), from which EF is extracted. c, Dispersion image measured upon pumping. d, EDCs cut through black box at different delay times with fitting peaks appended.
Extended Data Fig. 2 Schematic illustration of the experimental geometry.
a, Schematic for the experimental geometry. The pump is incident on the monolayer graphene sample at near normal angle, therefore, electric fields for both p-pol. and s-pol. are dominantly confined within the sample plane, and there is negligible out-of-plane light field. b, Schematic illustration of the polarization with respect to the Dirac cone. The light field is along the kx (ky) direction for p-pol. (s-pol.) pump.
Extended Data Fig. 3 Dependence of Floquet-induced hybridization gap on the pump fluence.
a-e, Dispersion images measured before pumping (a) and at Δt = 0 fs upon driving at 490 meV with different pump fluence (b-e). f-j, EDCs for data shown in (a-e) at momentum of resonant points. k, Extracted Floquet-induced hybridization gap as a function of the pump fluence. Data in k are presented as fitting values at different pump fluence, with error bars representing the combination of statistical fitting error and estimated systematic contribution.
Extended Data Fig. 4 Floquet band engineering upon driving at different pump photon energies.
a, A schematic for the resonance points upon driving with different pump photon energies. b, TrARPES dispersion images measured at Δt = -300 fs. c, TrARPES dispersion images measured at Δt = 0 fs upon 490 meV pumping. The pump polarization is along the kx direction and the pump fluence is 4.1 mJ/cm2. d, TrARPES dispersion images measured at Δt = 0 fs upon 600 meV pumping. The pump polarization is along the kx direction and the pump fluence is 6.4 mJ/cm2. e, EDCs for data shown in (b-d) at momentum resonance point.
Extended Data Fig. 5 Floquet band engineering upon driving at different pump polarizations.
a, A schematic of the experimental geometry for the p-pol. and s-pol. pumps. b-d, TrARPES dispersion images measured at Δt = -300 fs (b) and Δt = 0 fs with p-pol. pump (c) and s-pol. pump (d). The pump photon energy is 490 meV and the pump fluence is 4.1 mJ/cm2. e, EDCs for data shown in (b-d) at momentum resonance points with fitting peaks appended.
Extended Data Fig. 6 Fitting residuals to show the quality of the fitting.
a, Dispersion image at Δt = 0, with the momentum integration window marked by lines. b, EDCs obtained by integrating over the indicated momentum range. c, Residuals from the EDC fitting, shown on the same scale as (b).
Extended Data Fig. 7 Variation of the extracted gap by using different choices of integration momentum windows.
a-c, Dispersion images, where dashed boxes indicate the momentum integration windows used for EDCs shown in (d-f). The values are also labeled on the top of each panel. d-f, Extracted gap values obtained from EDC fittings.
Extended Data Fig. 8 TrARPES dispersion image and simulation.
a, Dispersion image at Δt = 0 with simulated dispersion overplotted. b, Simulated TrARPES spectrum upon pumping.
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Wang, F., Cai, X., Tang, X. et al. Observation of Floquet-induced gap in graphene. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02549-y
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DOI: https://doi.org/10.1038/s41563-026-02549-y


