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In-plane anomalous Hall effect in a low-dimensional system

Nature Materials (2026) Cite this article

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Abstract

The anomalous Hall effect (AHE) in magnetic systems is typically governed by symmetry constraints that require the Hall response to be proportional to the out-of-plane magnetization component. Here we demonstrate the emergence of an unconventional in-plane AHE in a low-dimensional heterostructure. By interfacing a low-symmetry topological semimetal with a ferromagnetic insulator, we realize a system with reduced symmetry in which only a single mirror plane is preserved. When the magnetization acquires a finite component within this mirror plane, the remaining symmetry is broken, enabling a Hall response that depends on both in-plane and out-of-plane magnetization components. Measurements across multiple devices reveal a gate-tunable AHE, indicating electrostatic control of the underlying mechanisms. A minimal symmetry-constrained microscopic model shows that interfacial spin–orbit coupling and exchange interaction are responsible for the observed multidirectional AHE response. Our work establishes a pathway for engineering tunable, symmetry-driven Hall effects in low-dimensional quantum materials.

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Fig. 1: AHE and crystal symmetry.
The alternative text for this image may have been generated using AI.
Fig. 2: Out-of-plane magnetization induced AHE in the TaIrTe4/CGT system.
The alternative text for this image may have been generated using AI.
Fig. 3: In-plane magnetization induced AHE in TaIrTe4/CGT system.
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Fig. 4: Rotational invariance of in-plane AHE in the TaIrTe4/CGT system.
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Data availability

All the data supporting the findings of this study are available in the article and its Supplementary Information. Source data are provided with this paper.

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Acknowledgements

S. Singh acknowledges the financial support from U.S. Office of Naval Research (ONR) under award no. N00014-23-1-2751, National Science Foundation (NSF) through grant nos. ECCS-2208057, DMR-2210510 and ECCS-2531211, and from the Center for Emergent Materials at The Ohio State University, an NSF MRSEC, through award no. DMR-2011876. S. Singh also acknowledges financial support from NSF-CAREER Award through grant no. ECCS-2339723. J.K. acknowledges the financial support from ONR under award no. N00014-23-1-2751, the Center for Emergent Materials at The Ohio State University, an NSF MRSEC, through award no. DMR-2011876, and the US Department Office of Science, Office of Basic Sciences, of the US Department of Energy through award no. DE-SC002549 (for device fabrication). J.K. also acknowledges financial support from NSF-CAREER Award under grant no. DMR-2339309. Q.M. and J.T. acknowledge support from the ONR under grant no. N00014-24-1-2102 and from the NSF under grant no. 2522383. The single crystal growth and characterization of TaIrTe4 at UCLA were supported by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences under award no. DE-SC0021117. J.H.E. acknowledges the support for hBN crystal growth from the US Office of Naval Research under award no. N00014-22-1-2582. K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant nos. 21H05233 and 23H02052), the CREST (JPMJCR24A5), JST and World Premier International Research Center Initiative (WPI), MEXT, Japan. We acknowledge A. J. Williams for providing the schematic of TaIrTe4 crystal structure used in the figures. We also thank R. Cheng and J. Tang for insightful discussions.

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Author notes

  1. These authors contributed equally: I-Hsuan Kao, Ravi Kumar Bandapelli.

Authors and Affiliations

  1. Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA

    I-Hsuan Kao, Ravi Kumar Bandapelli, Zhenhong Cui, Shuchen Zhang, Souvik Sasmal, Aalok Tiwari, Mei-Tung Chen, Raghvendra Posti, Shubhayu Chatterjee, Jyoti Katoch & Simranjeet Singh

  2. Department of Physics, Boston College, Chestnut Hill, MA, USA

    Jian Tang & Qiong Ma

  3. Department of Physics and Astronomy and the California NanoSystems Institute, University of California, Los Angeles, CA, USA

    Tiema Qian & Ni Ni

  4. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, USA

    Rahul Rao

  5. Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, USA

    Jiahan Li & James H. Edgar

  6. Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan

    Kenji Watanabe

  7. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan

    Takashi Taniguchi

  8. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA

    Su-Yang Xu

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Contributions

S. Singh and J.K. supervised the research. I.-H.K. and R.K.B. prepared the devices, performed measurements and analysed the data with assistance of Z.C., S.S., A.T., M.-T.C. and R.P. J.T., Q.M. and S.-Y.X. provided the support for sample and device preparation. S.Z. and S.C. provided the theoretical support. R.R. carried out polarized Raman measurements. T.Q. and N.N. grew the bulk crystals of TaIrTe4. J.L., J.H.E., K.W. and T.T. provided the bulk h-BN crystals. All authors contributed to writing the paper.

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Correspondence to Simranjeet Singh.

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Nature Materials thanks Gang Cao and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Supplementary Figs. 1–10 and Table 1.

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Kao, IH., Bandapelli, R.K., Cui, Z. et al. In-plane anomalous Hall effect in a low-dimensional system. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02611-9

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