Extended Data Fig. 5: Characterizations of the 1T1R chip corresponding to Fig. 4.

a-b, Schematic (a) and STEM image (b) of the 1T1R cell cross-section. The inset in (b) is the HR-TEM image of Sb2O3 memristor. c, Volatile switching curves of 1T1R cell with different VG. d, Volatile response to the 4-bit sequential electrical pulse in the reservoir, with each state tested 3 times. e, Non-volatile switching curves of 1T1R cell with different VG. f, Multi-conductance states of 1T1R cell. g, Comparison between the directly measured output current and the arithmetic output current of 8 columns in the readout layer.