Abstract
Doping-induced superconductivity in group-IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group-III atoms into C, Si or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular-beam epitaxy with extreme hole concentrations (nh = 4.15 × 1021 cm−3, 17.9% Ga substitution) that yield superconductivity with a critical temperature of Tc = 3.5 K. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor–semiconductor platform.
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Raw data are available via Zenodo at https://doi.org/10.5281/zenodo.17065133 (ref. 48).
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Acknowledgements
P.J.S. and J.S. acknowledge funding support from the United States Air Force Office of Scientific Research award number FA9550-21-1-0338. This work was partially supported by the Australian Research Council under the following grants: DE230100173 (J.A.S.), LP210200636 (Y.-H.C. and P.J.) and DE220101147 (C.V.). This research was undertaken on the X-ray absorption spectroscopy and the small-angle X-ray scattering/wide-angle X-ray scattering beamlines at the Australian Synchrotron, part of ANSTO. The XRR data reported in this paper were obtained at the Central Analytical Research Facility operated by Research Infrastructure (QUT). We acknowledge computational resources provided by the Australian National Computational Infrastructure and Pawsey Supercomputing Research Centre through the National Computational Merit Allocation Scheme. Electron microscopy was performed at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University. S.S.-R. acknowledges D. Huber for assisting with the TEM sample preparation. P.J. acknowledges fruitful discussions with R. McKenzie and B. Powell.
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Conceptualization: P.J., J.S. and E.D. Methodology: J.A.S., P.J.S., C.V. and S.S.-R. Investigation: J.A.S., P.J.S., C.V., A.B., A.D., Y.-H.C., J.v.D., F.H.K., A.L., D.P. and S.S.-R. Visualization: J.A.S. and P.J.S. Funding acquisition: J.A.S., P.J. and J.S. Project administration: J.A.S., P.J.S., P.J. and J.S. Supervision: J.A.S., P.J., J.S., E.D. and L.W. Writing—original draft: P.J., J.A.S. and P.J.S. Writing—review and editing: J.A.S., P.J.S., C.V., P.J. and J.S.
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Steele, J.A., Strohbeen, P.J., Verdi, C. et al. Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films. Nat. Nanotechnol. 20, 1757–1763 (2025). https://doi.org/10.1038/s41565-025-02042-8
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DOI: https://doi.org/10.1038/s41565-025-02042-8


