Extended Data Fig. 4: Selective erasing/programming of MoS2 flash memory array.
From: Sb-contacted MoS2 flash memory for analogue in-memory searches
(a) Selectively erase a single cell in the same column. (b) The distribution of readout current of 96 devices within a 6x16 array, read at VG = -1.2 V and VD = 1 V. 32 devices were selectively programmed, through the readout current, three letters of “HKU” can be observed.
