Extended Data Fig. 1: Temperature-dependent electrical characteristics and extracted Schottky barrier.
From: Sb-contacted MoS2 flash memory for analogue in-memory searches
(a) Transfer characteristic curves of the MoS2 flash memory (LCH = 200 nm) measured at low temperature. (b) Output characteristic curves of the MoS2 flash memory measured at 10 K, VG = -6 V ~ 10 V. The linear IV curves at small bias voltage indicate an ideal Ohmic contact of Sb–MoS2. (c) Arrhenius plots of the ohmic Sb–MoS2 flash memory at different VG = -5 V ~ 7 V and VD = 0.1 V. (d) The extracted energy barrier vs VG, showing a negligible Schottky barrier for Sb–MoS2 flash memory at flat band state.
