Extended Data Fig. 1: Focused ion beam sculpted devices of Co₃Sn₂S₂.

a-f Resistance measured as a function of temperature, and scanning electron micrographs of the six investigated focused ion beam-fabricated devices, with helical pitch L, rod radius R, conducting cross sectional area A, and contact separation D: a, left-handed (LH) helix with L = 1.0 μm, R = 1.0 μm, A = ~ 0.18 μm², D = 16.4 μm. b, right-handed (RH) helix with L = 1.0 μm, R = 1.0 μm, A = ~ 0.18 μm², D = 16.8 μm. c, achiral (AC) rod with A = ~ 0.23 μm², rod length = 9.8 μm and D = 15.9 μm. d, LH helix with L = 0.5 μm, R = 0.5 μm, A = ~ 0.06 μm², D = 10 μm. e, RH helix with L = 2.0 μm, R = 2.1 μm, A = ~2 μm², D = 25.7 μm. f, Hall bar with thickness 1.6 μm, width 4.1 μm, and contact separation (widest separation) 15.7 μm. In all cases, the Co₃Sn₂S₂ structures were fabricated by Ga ion milling, and fixed to patterned Au electrodes on Al₂O₃ substrates with in-situ Pt deposition. All scale bars are 10 μm.