Extended Data Fig. 7: FIB SEM cross-sections of two trench designs used in trap 3D-100-Au-V. | Nature

Extended Data Fig. 7: FIB SEM cross-sections of two trench designs used in trap 3D-100-Au-V.

From: 3D-printed micro ion trap technology for quantum information applications

Extended Data Fig. 7: FIB SEM cross-sections of two trench designs used in trap 3D-100-Au-V.

a, Secondary electron SEM image of the trench design for the electrical paths. b, The corresponding BSE SEM image. Surface roughness and curtaining artefacts arise from FIB milling and the lighter-grey layer at the trench base reflects Au–C redeposition during the milling process. c,d, Secondary electron SEM image (c) and BSE SEM image (d) of the trench design used in the central region of the ion trap. The thin top layer is a protective carbon coating applied before FIB milling.

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