Extended Data Fig. 4: Effect of in-situ passivated edge technology (iPET) on HIBC’s photoelectrical performance. | Nature

Extended Data Fig. 4: Effect of in-situ passivated edge technology (iPET) on HIBC’s photoelectrical performance.

From: Silicon solar cells with hybrid back contacts

Extended Data Fig. 4: Effect of in-situ passivated edge technology (iPET) on HIBC’s photoelectrical performance.

a-c, solar cells’ FF, VOC, and JSC are shown for cells fabricated with and without iPET on wafers with low (1-1.5 Ω cm) and high (8-10 Ω cm) resistivity. In the box plot, the top lines, bottom lines, lines in the box and boxes represent maximum values, minimum values, median values and 25-75% distributions, respectively.

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