Extended Data Fig. 8: ISPP characteristics of 100 devices incorporating a 5-nm-thick SiO2 for Vth distribution evaluation. | Nature

Extended Data Fig. 8: ISPP characteristics of 100 devices incorporating a 5-nm-thick SiO2 for Vth distribution evaluation.

From: Ferroelectric transistors for low-power NAND flash memory

Extended Data Fig. 8: ISPP characteristics of 100 devices incorporating a 5-nm-thick SiO2 for Vth distribution evaluation.

The incremental step for the ISPP operation is 0.1 V. The delay between PGM and verify operation was 100 μs. The read-after-write-delay characteristics of our device (Extended Data Fig. 2d) confirm that data stability remains unaffected irrespective of the duration between PGM and verify operation. The ERS state is defined as Vth after an ERS operation, corresponding to the topmost Vth distribution marked with a red dotted line. A total of 31 verification voltages are defined at equally spaced intervals. The subsequent 31 states are determined by their respective verification voltages, where the Vth state that first exceeds the nth verification voltage is designated as the nth state.

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