Extended Data Fig. 8: Fabrication procedure.
From: Low-power integrated optical amplification through second-harmonic resonance
(a) Deposit 100 nm of SiO2 onto thin-film lithium niobate on insulator chip. (b) Use electron beam lithography to pattern and then liftoff 100 nm-thick aluminum electrodes where the poling periods are adaptively designed to compensate for thickness variations across the film. (c) Apply high voltage pulses to periodically pole the LN and then remove the electrodes. (d) Pattern HSQ mask using electron beam lithography for waveguide patterning. (e) Argon ion mill 300 nm of LN to etch the waveguides and then acid cleaning to produce patterned LN waveguides. (f) Deposit 700 nm of SiO2 for cladding using HDPCVD.
