Fig. 5: Hall coefficient data at low temperatures.
From: Large-scale analogue quantum simulation using atom dot arrays
The temperature-dependent Hall coefficient RH obtained from magneto-transport measurements for the three conductive devices A–C of Fig. 3. Horizontal dashed lines denote the value expected if each donor contributes one free electron, ignoring dot lattice and interaction effects. Vertical lines indicate temperatures Tc,t,J for device C at which the physics of the electrons are predicted to undergo notable changes.
