Figure 3
From: InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy
Depletion depth as a function of applied reverse bias for the In0.5Ga0.5P devices at room temperature. (a) 200 μm devices, D1 (filled squares); (b) 400 μm devices, D3 (filled circles).
