Figure 7
From: InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy
Equivalent noise charge of the dielectric noise and incomplete charge collection noise as a function of reverse bias using the In0.5Ga0.5P devices: 200 μm diameter device, D1 (crosses); 400 μm diameter device, D3 (filled rhombuses).
