Table 1 Layer details of the In0.5Ga0.5P photodiode.
From: InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy
Layer | Material | Thickness (μm) | Dopant | Dopant Type | Doping density (cm−3) |
|---|---|---|---|---|---|
1 | Ti | 0.02 | |||
2 | Au | 0.2 | |||
3 | GaAs | 0.01 | Zn | p+ | 1 × 1019 |
4 | In0.5Ga0.5P | 0.2 | Zn | p+ | 2 × 1018 |
5 | In0.5Ga0.5P | 5 | undoped | ||
6 | In0.5Ga0.5P | 0.1 | Si | n+ | 2 × 1018 |
7 | Substrate n+ GaAs | ||||
8 | InGe | 0.02 | |||
9 | Au | 0.2 |
