Correction to: Scientific Reports https://doi.org/10.1038/s41598-019-45392-9, published online 19 June 2019
The original version of this Article contained an error in Figure 3b, where the y-axis
“/(nA)”
now reads:
“/(μA)”
The original Figure 3 and accompanying legend appear below. The original Article has been corrected.
Top gate control. (a) Current I vs top gate voltage VTG and back gate voltage VBG for MoS2 D1. The current can be smoothly tuned by both VTG and VBG. The dark lower left region highlights the voltage space when the conducting channel of the device is pinched off. (b) I vs VTG at various applied VBG, where current steps can be observed, suggesting the formation of a quantum constriction. (c) Current I vs top gate voltages VMG and VPG at VBG = 105 V for WSe2 D2 (see Fig. 1c inset). The current through the device can be independently controlled by the split top gates PG and MG. (d) Current I vs VPG at fixed VBG and VMG taken at different temperatures. The current steps are visible up to 25 K. (e) I vs VPG at various applied VMG and fixed VBG = 105 V, where similar current steps are observed.
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Lau, C.S., Chee, J.Y., Thian, D. et al. Author Correction: Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric. Sci Rep 11, 17435 (2021). https://doi.org/10.1038/s41598-021-96557-4
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DOI: https://doi.org/10.1038/s41598-021-96557-4
