Figure 5
From: First designing of a silicene-based optical MOSFET with outstanding performance
(a) 3D view of the electric field (\({\vec{\text{E}}}\)(x) (V/m)) in the TE02 mode at the frequency of 10 THz for WS = 300 nm. (b) Distribution of the electric field (\({\vec{\text{E}}}\)(x) (V/m)) in the output port (y–z plane). (c) Electric field fluctuations along the length of the device (z-x plane).
