Table 2 Detailed parameters of the proposed converter (the proposed converter is compared with the same type of converter, including voltage gain, switching voltage stress, input current ripple, number of devices, and whether they are common ground).

From: An ultra-high gain boost converter with low switching stress for integrated multi-energy storage systems

Converter

Item

Voltage gain

Number of elements

Voltage stress on the switch

Input current ripple

C.G

M

C

D

S

T

15

\(\frac{3+2n}{\left(1-D\right)^{2}}\)

2

6

7

1

16

\(\:\frac{{V}_{in}}{{(1-D)}^{2}}\)

Low

18

\(\frac{3-D}{\left(1-D\right)^{2}}\)

3

5

6

2

16

\(\frac{{V}_{in}}{1-D},\frac{(2-D{)V}_{in}}{\left(1-D\right)^{2}}\)

High

19

\(\frac{4}{\left(1-D\right)^{2}}\)

5

5

7

4

21

\(\frac{1}{{(1-D)}^{2}}\)

Low

26

\(\frac{3}{\left(1-D\right)^{2}}\)

3

5

7

1

16

\(\frac{2{V}_{in}}{{(1-D)}^{2}}\)

Low

27

\(\frac{1+2D-{2D}^{2}}{\left(1-D\right)^{2}}\)

4

6

5

1

16

\(\frac{{V}_{in}}{{(1-D)}^{2}}\)

Low

28

\(\frac{3+D}{\left(1-D\right)^{2}}\)

2

5

0

7

14

\(\:\frac{10-2D}{3+D}\)

High

×

The proposed converter

\(\:\frac{1+n(2-D)^{2}}{\left(1-D\right)^{2}}\)

3

6

5

2

16

\(\:\frac{{V}_{in}}{1-D},\frac{{V}_{in}}{\left(1-D\right)^{2}}\)

Low

  1. Wherer M = Magnetic core, C = Capacitor, D = Diode, S = Switch, and T = Total, C.G = Common Ground.