Fig. 3

(a) I-V measurement of Mg doped sample (the insert shows transferred Mg doped hBN on sapphire for Hall effect analysis). (b) Carrier concentration versus 1000/T of Mg doped hBN on sapphire.

(a) I-V measurement of Mg doped sample (the insert shows transferred Mg doped hBN on sapphire for Hall effect analysis). (b) Carrier concentration versus 1000/T of Mg doped hBN on sapphire.