Fig. 3 | Scientific Reports

Fig. 3

From: A hBN/Ga2O3 pn junction diode

Fig. 3

(a) I-V measurement of Mg doped sample (the insert shows transferred Mg doped hBN on sapphire for Hall effect analysis). (b) Carrier concentration versus 1000/T of Mg doped hBN on sapphire.

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