Table 3 Initial parameters of different SC layers as fed in the simulation.
From: Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell
Sr. no. | Parameters | CH3NH3SnI3 | CZTS | CdS | ZnO | AZO |
|---|---|---|---|---|---|---|
1. | Thickness (nm) | 300 | 550 | 150 | 100 | 70 |
2. | Band gap (ev) | 1.3 | 1.5 | 2.42 | 3.37 | 3.37 |
3. | Electron affinity (ev) | 4.17 | 4.5 | 4.4 | 4.35 | 4.4 |
4. | Dielectric permittivity | 8.2 | 7 | 10 | 10 | 9 |
5. | Conduction band density of states (cm− 3) | 1018 | 2.2 × 1018 | 1.2 × 1018 | 2.22 × 1018 | 1019 |
6. | Valence band density of states (cm− 3) | 1018 | 1.8 × 1019 | 1.8 × 1019 | 1.78 × 1019 | 1019 |
7. | Electron and hole thermal velocity (cm s− 1) | 107 | 107 | 107 | 107 | 107 |
8. | Electron mobility (cm2 V− 1 s− 1) | 2 × 103 | 102 | 102 | 102 | 102 |
9. | Hole mobility (cm2 V− 1 s− 1) | 3 × 102 | 25 | 50 | 25 | 2.5 × 101 |
10. | Donor density (cm− 3) n type | 10 | 10 | 2.1 × 1017 | 1020 | 1021 |
11. | Acceptor density (cm− 3) p type | 1021 (variable) | 1017 | - | - | 10 |
12. | Defect type | Neutral | Neutral | Neutral | Neutral | Neutral |
13. | Capture cross section of electrons (cm2) | 2.5 × 10− 13 | 2.8 × 10− 13 | 2.9 × 10− 21 | 10− 15 | 10− 15 |
14. | Capture cross section of holes (cm2) | 8.5 × 10− 15 | 7 × 10− 14 | 2.9 × 10− 21 | 10− 15 | 10− 15 |
15. | Total defect density (cm− 3) | 3.029 × 1016 | 1015 | 1015 | 1015 | 1014 |
16. | Energetic distribution | Gaussian | Single | Single | Single | Single |
17. | Absorption file | Ref.91 | Ref.92 | Ref.92 | Ref.94 | Ref.95 |
