Fig. 3
From: Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application

XRD θ/2θ scan of W/Bi2Te3/WSe2/SiO2/Si stacked films before and after PMA from 200 to 450 °C extracted from (a) 1L WSe2 and (b) > 10L WSe2. The high-resolution scanning transmission electron microscope (STEM) cross-sectional images of 400 °C annealed W/Bi2Te3 stacked film as deposited on (c) 1L WSe2 and (d) > 10L WSe2. The yellow dashed line indicates the boundary between polycrystalline Bi2Te3 with tiny grain size and layered Bi2Te3.