Fig. 4
From: Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application

(a) A top-view illustration of the smallest repeating cell of the Bi2Te3/WSe2 vdW interface. To prevent complexity, only Te and Se atoms adjacent to a vdW gap are shown. (b) The enlarged HAADF-STEM images of the Bi2Te3/WSe2 interface, indicating the formation of the vdW interface. The EDX mapping of (c) W, (d) Se, (e) Bi, and (f) Te at the Bi2Te3/WSe2 interface, suggesting no chemical interaction occurs.