Fig. 1 | Scientific Reports

Fig. 1

From: High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area

Fig. 1

Proposed structure (FPHK) utilized in this study. (a) Bird’s eye view and (b) A-A’ cross-sectional view. Floating poly (FP) is partially introduced on the N-Well and drain junction, and high-k material (HK) is selectively deposited on the drift region adjacent to FP. The potential of FP is transmitted to the drift region through HK, leading to a potential modulation within the drift region. (c) Process flow for FPHK. The black text outlines the conventional Drain-extended FinFET. (i)-(iii) steps depict optimization factors for FPHK, and (iv) step describes an additional step specific to FPHK. Specific sections of the spacers and oxide are deliberately left out to improve the visual clarity of the structure.

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