Fig. 3 | Scientific Reports

Fig. 3

From: High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area

Fig. 3

(a) Derivative of IDS as a function of VDS with VGS of 0.0 V and 0.7 V for Conv and FPHK. The breakdown points representing BVON and BVOFF are indicated. (b)Elat under the gate-off and on state at VDS = 3.3 V for Conv. There is no significant difference between BVOFF and BVON for FPHK, while for Conv, the electric field is concentrated at the DE region upon gate-on, leading to a significant decrease in BVON.

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