Fig. 5
(a)BVON and RON for Conv and FPHK with different LHK. Throughout the entire LHK range, FPHK shows increased BVON and reduced RON compared to Conv. (b)Elat and (c)Elat, max for different LHK under the on-state bias condition for Conv and FPHK. At LHK = 60 nm, FPHK achieves the lowest Elat, max, showing a balance between electric field distribution within the region (ii) and (iii). (d) Electron density for Conv and FPHK under the RON extraction bias condition. The potential of FP, increased by drain bias, is transmitted to the drift region through HK, resulting in electron accumulation within the drift region.
