Fig. 6 | Scientific Reports

Fig. 6

From: High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area

Fig. 6

(a) Transfer and (b) output curves for Conv and FPHK. (c)gm, (d)gds, and (e)VK for Conv and FPHK as a function of IDS. FPHK shows an improved gm flatness compared to Conv. As IDS increases, Conv shows a sharp increase in gds after SCM, while the increase in FPHK is suppressed. (f) Electron Density along the horizontal cut-line under the on-state bias condition for Conv and FPHK. FPHK shows a clearer pinch-off.

Back to article page