Table 7 Shows the comparison between the performance of our sensor and some reported works.
From: Maximizing temperature sensitivity in a one-dimensional photonic crystal thermal sensor
Ref | Structure | S (nm/ºC) | QF | FOM (°C−1) | SNR | Δn (°C) | SR (nm) | Operating range |
|---|---|---|---|---|---|---|---|---|
[(TiO2)6 SiO2 (SiO2)6] | 0.0037 | NA | NA | NA | NA | NA | 0–300 ºC | |
[(TiO2)6 Bi4Ge3O12 (SiO2)6] | 0.005 | NA | NA | NA | NA | NA | 0–300 ºC | |
[Si/air)5 Si (air/Si)5] | 0.064 | NA | NA | NA | NA | NA | 100:700 k | |
Cascaded Si (PhC) nanobeam cavities | 0.1629 | 4 × 104 | NA | NA | 0.08 | NA | 30:80 °C | |
[(Si)(air/Si)3(LC)(Si/air)3(Si)] | 0.328 | 4840 | NA | NA | NA | NA | 15:55 °C | |
[Si/polymer/SiO2] | 0.380 | NA | NA | NA | NA | NA | 25:100 ºC | |
[(Al2O3)5 Toluene (TiO2)5] | 0.0887 | 471.4 | NA | NA | NA | NA | − 20:70 °C | |
[(TiO2/Al2O3)N/Al2O3/(TiO2/Al2O3)N] | 0.0065 | NA | NA | NA | NA | NA | 0:300 ºC | |
[Si/SiO2)10 (MLC-9200-000) (Si/SiO2)10] | 0.224 | NA | 20.36 | 814 | 0.006 | 0.0014 | 15:55 ºC | |
[Si/SiO2)N/2 TiO2 (Si/SiO2)N/2] | 0.01069 | NA | 0.218 | 218.2 | 0.795 | 0.0085 | 0:1000 ºC | |
Air (SiO2/Si)N1(G/LC/G) (SiO2/Si)N2 substrate G/LC/G defect (LC thickness 2500 nm) | 4 | 11,000 | NA | NA | NA | NA | 15:55 ºC | |
prism/Au/water/(Si∕SiO2)N/Si | 2.8:10.8 | 3.5 × 103 | NA | NA | 3 × 10−7 | NA | 0–100 ºC | |
(Si/SiO2/PS)N with N = 10 | 0.08758 | NA | NA | NA | NA | NA | 25–100 ºC | |
Si/PS/SiO2 | 0.085 | 2216.6 | 0.0243 | NA | NA | NA | 25–900 ºC | |
[air/(AB)N/2 D (AB)N/2/air] (Sensor-1) [air/(AB)N/2 (BA)N/2/air] (Sensor-2) [air/(AB)N/2 D (BA)N/2/air] (Sensor-3) | 0.173 | 2284 | NA | NA | NA | NA | 25–375 ºC | |
[(Si)6NLC(SiO2)6] | − 0.12317 | 107 | 1002.48 | NA | NA | NA | 0–50 ºC | |
Presented work | (GaN/Air)NGaN/Gylecrin/GaN(Air/GaN)N | 20.074 | 14,723.2 | 397.18 | 2174.2 | 6.8218 | 136.946 | 20–45 ºC |
