Fig. 1

(a) Bandgap and dielectric constant values of various dielectric materials^18,19. (b) Dielectric constant, and (c) current density (measured at 2.5 MV/cm) of fabricated MIM capacitors with HfO₂, ZrO₂ as the insulator (both 20-nm-thick) and 50-nm-thick Mo as the electrodes. The lower measured dielectric constant from its typical amorphous-phase value is attributed to partial crystallization during post-deposition annealing²². (d) Bottom gate structure of IGZO TFT with SiO₂ (PECVD), HfO₂ (ALD), and ZrO₂ (ALD) GI. All GI layers have the same thickness of 20 nm. Channel length and width are 20 μm and 40 μm, respectively. Molecular structures of the precursors for HfO₂ and ZrO₂ are shown.