Table 1 Device parameters of IGZO TFTs with SiO2, HfO2, and ZrO2 as the GI layer. ID values at VOV = 2 V and VDS = 2 V are shown.

From: Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping

GI

κ

ID [μA]

SS [V/dec]

Vth [V]

SiO2

3.9

2.94

0.50

0.631

HfO2

17

8.23

0.32

0.325

ZrO2

30

20.62

0.24

1.055

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