Fig. 2
(a) The shadow evaporation model geometric representation. Josephson junction dimensions change depending on its wafer position. The proposed model takes into account the source distance \(\:D\), thickness of the top (\(\:\text{H}\)) and bottom (\(\:\text{h}\)) layers of organic mask, and shadow evaporation regime parameters \(\:{{\upalpha\:}}^{{\prime\:}}\). A non-point source model is used to increase the bias calculation precision. (b) Bias corrections of bottom Al electrode dimensions over the wafers. I Bias corrections zones excluding model parameters, II SEBi correction with a point evaporation source, III SEBi correction with a non-point evaporation source. (c) Experimentally measured distribution of Josephson junction areas over the wafers for 130 × 170 nm2 (0.025 µm2top map) and 130 × 670 nm2 (0.090 µm2bottom map) before (left) and after (right) SEBI correction with a non-point evaporation source.
