Table 5 Input HTL parameters.
From: The performance of Cu2MnSnS4 based solar cells with CZTS as hole transport nanolayer
Parameter | MoS2 21 | CuSbS2 41 | ||
|---|---|---|---|---|
Thickness (µm) | 0.1 | 0.1 | 0.1 | 0.1 |
Dielectric constant | 13.6 | 18.1 | 14.6 | 10 |
Electron affinity (eV) | 4.2 | 4.07 | 4.2 | 4.5 |
Band gap Eg (eV) | 1.24 | 1.5 | 1.58 | 1.5 |
Density of state NC(cm− 3) | 2.2 × 1018 | 2.2 × 1020 | 2 × 1018 | 2.2 × 1018 |
Density of state, NV(cm− 3) | 1.9 × 1019 | 5.5 × 1019 | 1 × 1019 | 1.8 × 1019 |
Electron mobility µn (cm2/ Vs) | 100 | 3.4 | 49 | 100 |
Hole mobility µp (cm2/ Vs) | 25 | 3.4 | 49 | 25 |
Acceptor doping NA (cm− 3) | 1 × 1018 | 1 × 1018 | 1.38 × 1018 | 1 × 1018 |
