Fig. 1 | Scientific Reports

Fig. 1

From: Rapid single-flux-quantum and adiabatic quantum-flux-parametron cell libraries using a 1 kA/cm2 niobium fabrication process

Fig. 1

Device structure of the 1KP. JJ: Nb/AlOx/Nb junction; GP: Nb ground plane; BAS, COU, and CTL: Nb wiring layers; RES: Ti/Pd/Ti resistor (thickness: 2 nm/50 nm/4 nm); GC, RC, BC, JC, and CC: contacts between Nb layers. SiO2 thickness between GP and RES: 150 nm; that between RES and BAS: 150 nm; JJ upper layer thickness: 150 nm; Nb2O5: anodized Nb; Al2O3: anodized Al; AlOx: thermally oxidized Al.

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