Table 2 Summary of the junction characteristics measured at 4.2 K for the wafer with a lot number of 1KP001 No. 1.

From: Rapid single-flux-quantum and adiabatic quantum-flux-parametron cell libraries using a 1 kA/cm2 niobium fabrication process

TEG name

1.2-μm JJ

1.6-μm JJ

2.2-μm JJ

3.2-μm JJ

4.2-μm JJ

5.2-μm JJ

6.2-μm JJ

Junction area including shrinkage (μm2)

0.91

1.84

3.83

8.74

15.65

24.57

35.48

Standard deviation of Ic scattering (%)

5.17

3.08

1.69

1.19

0.74

0.53

0.53

Critical current Ic at 1.5 V (mA)

0.011

0.023

0.048

0.109

0.197

0.307

0.443

Normal current In at 4.0 V (mA)

0.034

0.063

0.125

0.272

0.474

0.744

1.065

IcRn (mV)

1.344

1.455

1.525

1.598

1.660

1.651

1.663

Sub-gap resistance Rsg (Ω)

4418

2358

1187

648

329

222

146

IcRsg (mV)

50.43

54.32

56.69

70.48

64.67

68.27

64.49

Gap voltage Vg (mV)

2.76

2.77

2.77

2.76

2.77

2.77

2.76

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