Fig. 1 | Scientific Reports

Fig. 1

From: Enhanced SWIR photodetection in Te0.7Se0.3 alloy based phototransistors with spectral range of 1300 nm via dual-gate engineering

Fig. 1

(a) Schematic illustration of the Te/Se alloy based dual-gate phototransistor device structure. (b) Crystal structure schematic of the Te/Se alloy. (c) Optical image of a fabricated dual-gate phototransistor based on a Te/Se alloy thin film. (d) Comparison of operating mechanisms between a single gate and a dual-gate phototransistor, demonstrating enhanced charge separation under SWIR illumination in the dual-gate device. (e) SWIR transmittance of top gate ITO at an oxygen partial pressure of (O2 / O2 + Ar) 0.011 during ITO deposition.

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