Fig. 5 | Scientific Reports

Fig. 5

From: Enhanced SWIR photodetection in Te0.7Se0.3 alloy based phototransistors with spectral range of 1300 nm via dual-gate engineering

Fig. 5

Electrical characteristics of dual-gate Te0.7Se0.3 TFT. (a, b) Transfer and output characteristics of dual-gate Te0.7Se0.3 TFT. The inset in (a) shows an optical image of a fabricated device. (c) Extracted values of mobility (µFE) and subthreshold slope (SS) in TG, BG and DG mode. (d) Transfer characteristics of dual-gate Te0.7Se0.3 TFTs with varying VTG from − 2 to 6 V in steps of 2 V. (e) Contour plot of drain current as a function of VBG and VTG, extracted from (d).

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