Table 1 Some important material parameters listed along with their sources.
From: Investigation of ZnMgO/µc-Si thin-film solar cell using two-dimensional numerical simulation
Parameters | ZnMgO (n+) | µc-Si (p) |
|---|---|---|
Acceptor doping density, NA (cm− 3) | – | 1017 |
Donor doping density, ND (cm− 3) | 1017 − 1019 | – |
Thickness (µm) | 0.17519 | 1–5 |
Bandgap, Eg (eV) | 3.3–3.919 | 1.45 |
Electron affinity (eV) | 3.6–4.719 | 3.9 |
Effective lifetime of electrons, \(\:{\tau\:}_{n}^{eff}\) (μs) | 0.00919 | 528 |
Effective lifetime of holes, \(\:{\tau\:}_{p}^{eff}\) (μs) | 0.00919 | 528 |
Peak of gaussian distributed donor trap density, \(\:{n}_{gD}\) (cm− 2) | 1010 − 1014 | 1010 − 1014 |
Peak of gaussian distributed acceptor trap density, \(\:{n}_{gA}\) (cm− 2) | 1010 − 1014 | 1010 − 1014 |
Energy level of gaussian distributed acceptor traps, \(\:{e}_{gA}\) (eV) | Mid-gap32 | 0.725 |
Energy level of gaussian distributed donor traps, \(\:{e}_{gD}\) (eV) | Mid-gap32 | 0.725 |
Electron mobility, µn (cm2V− 1s− 1) | 1619 | 5029 |
Hole mobility, µp (cm2V− 1s− 1) | 419 | 2029 |
Relative permittivity, \(\:{\in\:}_{r}\) | 927 | 11.2 |
Width of the device (µm) | 1 | |
ZnO/µc-Si interface trap density, \(\:{N}_{t}\) (cm− 2) | 1010 − 1014 | |
