Table 2 Some key parameters used to authenticate the model are listed below along with their source.
From: Investigation of ZnMgO/µc-Si thin-film solar cell using two-dimensional numerical simulation
Parameters | Zn0.8Mg0.2O (n+)19 | c-Si (p)19 |
|---|---|---|
Thickness (µm) | 0.175 | 300 |
Bandgap (eV) | 3.77 | 1.12 |
Electron affinity (eV) | 3.81 | 4.05 |
Doping concentration (cm− 3) | 5 × 1019 | 2 × 1016 |
effective density conduction band, NC (cm− 3) | 4.42 × 1018 | 2.8 × 1019 |
Effective density valence band, NV (cm− 3) | 1.78 × 1019 | 1.83 × 1019 |
Electron lifetime (ns) | 9 | 5 × 105 |
Hole lifetime (ns) | 9 | 5 × 105 |
Electron mobility (cm2V− 1s− 1) | 16 | 990 |
Hole mobility (cm2V− 1s− 1) | 4 | 403 |
Zn0.8Mg0.2O/µc-Si interface trap density (cm− 2) | 1 × 1011 (best fit value) | |
