Fig. 7
From: Effect of C2H2F4/CF4O with low global warming potentials on SiNx etching as a CHF3 replacement
(a) Concentration of exhaust gases (ppm) measured using FT-IR in the exhaust line during plasma generation using CHF3, C2H2F4, C2H2F4+CF4O-based in Fig 3. (b) MMTCE values calculated for the gases used to etch the same SiNx thickness.
