Fig. 2
From: First-Principles insights into group-V impurities and their impact on germanium detector performance
(a) Formation energy (\(\Delta \textrm{E}_{\textrm{f}}\)) as a function of the electron chemical potential (\(\textrm{E}_{\textrm{F}}\)) for a \(\textrm{V}_{\textrm{Ge}}\). (b) Charge transition levels (CTLs) for a \(\textrm{V}_{\textrm{Ge}}\). The shaded region in plots represents the valence band (VB) and conduction band (CB).
