Fig. 3
From: First-Principles insights into group-V impurities and their impact on germanium detector performance
(a) Formation energy (\(\Delta \textrm{E}_{f}\)) as a function of the electron chemical potential (\(\textrm{E}_{F}\)) for group-V dopants in Ge. (b) Corresponding charge transition levels (CTLs) for the same dopants. For comparison, results for \(\mathrm {V_{Ge}}\) and \(\mathrm {Ge_i}\) are also included. The dotted lines in the plot show the corresponding results for fully relaxed HSE structures. In panel (a), \(\mathrm {P_{Ge}}\) results obtained using full HSE-relaxed structures (dotted black lines) are shifted down by 0.01 eV to avoid overlap with solid black lines. The shaded regions denote the valence band (VB) and conduction band (CB).
