Fig. 6
From: First-Principles insights into group-V impurities and their impact on germanium detector performance
(a) Formation energy (\(\Delta \textrm{E}_{\textrm{f}}\)) of defect complexes of the type XV (X = N, P, As, Sb) as a function of the electron chemical potential (\(\textrm{E}_{\textrm{F}}\)). (b) Corresponding charge transition levels (CTLs) for the defect complexes shown in (a). In both panels, the dotted black (PV) and steel blue (NV) lines represent the corresponding results obtained using full HSE-relaxed structures. The shaded regions denote the valence band (VB) and conduction band (CB).
